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JAPAN NANONET BULLETIN - 59th Issue - December 8, 2005

YOUNG RESEARCHERS’ INTRODUCTION

Takashi UCHIHASHI
Senior Researcher, Electro-nanocharacterization Group, Nanomaterial Laboratory, National Institute for Materials Science (NIMS)

Exploration of electron transport phenomena in atomic-scale wires fabricated through surface reconstruction

(Issued in Japanese: June 23, 2004)

Various kinds of surface reconstructions can be grown on the surface of clean semiconductor substrates by depositing a monolayer atoms followed by the appropriate processing. Generally, surface reconstructions are fundamentally distinct from their bulk counterparts due to strong interactions with the substrate and low-dimensionality of the systems.

Among the different surface structures, we are focused on one-dimensional (1D) reconstructions, i.e. atomic-scale surface nanowires. Our objectives are to elucidate experimentally their electron transport properties and to develop them for use in nanoelectronics in the future.

One example of 1D surface reconstructions is indium atomic wire arrays on silicon, which are two-atom wide chain assemblies. We have, for the first time, determined their electron transport properties, and remarkably, over a large area, the reconstruction has high conductivity that corresponds to a sheet resistance of about 30 kΩ. Furthermore, current through the atomic wires is strongly suppressed by defects near surface steps and/or a minute amount of point defects introduced into the wires themselves.

The conductivity of the atomic wires decreases drastically at around 130 K, accompanying a metal-insulator transition. The phenomenon, which is interesting from the viewpoint of fundamental physics, is ascribed to the so-called Peierls instability intrinsic to a 1D electron system.

In order to measure the electron conduction through individual atomic-scale wires, we are now developing a technique to connect the wires to microelectrodes without contaminating the sample surface. So far, we have attached microelectrodes to a single erbium disilicide nanowire grown on silicon. In the future, we will incorporate organic molecules into the constructs and utilize the magnetic properties of the wires.

Takashi UCHIHASHI
Takashi UCHIHASHI
Senior Researcher, Electro-nanocharacterization Group, Nanomaterial Laboratory, National Institute for Materials Science (NIMS)
 
1995Graduate School of Science, The University of Tokyo (Doctor of Science)
1995Researcher, National Research Institute for Metals (NRIM)
2001Researcher, National Institute for Materials Science (NIMS)
2003Also at Nanoscale Quantum Conductor Array Project, International Cooperative Research Project (ICORP), Japan Science and Technology Agency (JST)
2004Senior Researcher, NIMS
E-mail:

Fig. 1
Fig. 1 Large Image
(a)The atomic structural model, (b) a scanning tunneling microscope image, and (c) the temperature dependence of electrical conductivity of indium atomic wire arrays on silicon. The indium atomic wire arrays, being of high electrical conductivity near room temperature, exhibit metal-insulator transition below 130 K.
Fig. 1
Fig. 2 Large Image
(a) A thin titanium foil mask machined by focused ion beam for fabricating microelectrodes. (b) Electrode patterns evaporated through a mask. (c) The central area of (b): a scanning tunneling microscope image of an erbium disilicide nanowire connected to gold microelectrodes.

Relevant papers
  1. Ramsperger, U., Uchihashi, T. & Nejoh, H.
    Fabrication and lateral electronic transport measurements of gold nanowires
    Appl. Phys. Lett. 78 ,85 (2001).
  2. Uchihashi, T. & Ramsperger, U.
    Electron conduction through quasi-one-dimensional indium wires on silicon
    Appl. Phys. Lett. 80 , 4169 (2002).
  3. Uchihashi, T. & Ramsperger, U.
    Phase transition of the Si(111)-4x1-In surface reconstruction investigated by electron transport measurements
    Surf. Sci 532-535 , 685 (2003).