利用報告書 / User's Reports

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【公開日：2025.06.10】【最終更新日：2025.05.26】

課題データ / Project Data

課題番号 / Project Issue Number

24NM5064

利用課題名 / Title

半導体ナノ構造の形成制御と機能化

利用した実施機関 / Support Institute

物質・材料研究機構 / NIMS

機関外・機関内の利用 / External or Internal Use

内部利用（ARIM事業参画者以外）/Internal Use (by non ARIM members)

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】（主 / Main）加工・デバイスプロセス/Nanofabrication（副 / Sub）-

【重要技術領域 / Important Technology Area】（主 / Main）量子・電子制御により革新的な機能を発現するマテリアル/Materials using quantum and electronic control to perform innovative functions（副 / Sub）-

キーワード / Keywords

シリコン基材料・デバイス/ Silicon-based materials and devices, ナノワイヤ、ナノチューブ/ Nanowires and nanotubes, ナノシート、ナノリボン/ Nanosheets and nanoribbons, 薄膜/ Thin films, ナノ結晶・相分離系材料/ Nanocrystals and Phase separated materials, 表面・界面/ Surface and Interface,表面・界面・粒界制御/ Surface/interface/grain boundary control


利用者と利用形態 / User and Support Type

利用者名（課題申請者）/ User Name (Project Applicant)

深田 直樹

所属名 / Affiliation

国立研究開発法人　物質・材料研究機構

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

JEVASUWAN Wipakorn,Matsumura Ryo,ZHANG Qinqiang,SAPUTRO RahmatHadi,ZHANG Pengyu,WANG Guanghui,FERDOUS Jannatul,MAHMOUD Ahmed Mohammed Fuad

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

大井 暁彦,渡辺 英一郎,池田 直樹,藤井 美智子,簑原 郁乃

利用形態 / Support Type

（主 / Main）機器利用/Equipment Utilization（副 / Sub）,技術補助/Technical Assistance


利用した主な設備 / Equipment Used in This Project

NM-648：FE-SEM+EDX [SU8000]
NM-642：電子銃型蒸着装置 [MB-501010]
NM-616：シリコンDRIE装置 [ASE-SRE]
NM-635：電子ビーム描画装置 [ELS-BODEN100]
NM-638：水蒸気プラズマ洗浄装置 [AQ-500 #2]


報告書データ / Report

概要（目的・用途・実施内容）/ Abstract (Aim, Use Applications and Contents)

Three-dimensional Si nanostructures have been extensively studied to develop new materials for nanowire (NW) and nanostructure-based devices with suitable properties. SiNWs obtained through various methods were examined. SiNW-based solar cells as well as Si/Ge core-shell structures for transistors and photodetectors were fabricated in the research. In addition, layered semiconducting materials germanium monosulfide (GeS) were directly grown on SiO2/Si substrates. GeS field-effect transistors were fabricated and confirmed to exhibit light-induced change of gate-dependent current-voltage characteristics. Therefore, various facilities and machines in the Namiki foundry, including SEM, TEM, FIB, sputter, EB-evaporation, EB-lithography, plasma-etching, prober, dicing, etc., were necessary for the ongoing experiments.

実験 / Experimental

Various SiNW and nanostructure substrates, synthesized through top-down and bottom-up approaches using wet-chemical or plasma-dry etching and metal-catalyst CVD, were tailored to form radial homo- and hetero-structures for applications in solar cells and transistors. GeS thin films were grown using vapor transport on SiO2/Si substrates through bottom-up approaches and patterned isolating GeS structures for FETs were fabricated through top-down approaches. All nanostructural SiNW and GeS were observed using SEM (NM-648) in which nanostructures were fabricated using EB-lithography (NM-635) technique, RIE etching system (NM-616) and other facilities (NM-638).

結果と考察 / Results and Discussion

Achievements include high-efficiency solar cells, and the demonstration of hole gas accumulation as shown in Fig.1. Nonradiative energy transfer using nanocrystals has been extended for hybrid nanostructures to improve light harvesting in solar cells and photodetectors. Various techniques of chemical etching and thermal annealing were also performed to reduce the NW diameter with minimization of the NW defects to increase hole gas accumulation. Achievements include lateral growth of GeS thin films on SiO2/Si substrates, and the fabrication of GeS-FETs as shown in Fig. 2. Temporal change of the lateral grown GeS thin films on SiO2/Si substrates has been evaluated and may provide a technique to extend it on other insulating substrates. Various techniques of dry-etching and thermal annealing were conducted to improve the on-current of fabricated GeS-FETs.

図・表・数式 / Figures, Tables and Equations


Fig.1 (a) Core-shell SiNW homojuction and heterojunction solar cells, (b) energy transfer from SiQDs to SiNWs, (c) core-double shell NWs, and (d) dependence of ESR defect intensity observed in SiNWs with various thermal annealing for transistor application.



Fig.2. Temporal change for the lateral growth of GeS thin films on SiO2/Si substrate at (a) 20 min, (b) 35 min, and (c) 50 min. (d) Area-dependent Raman spectra of the lateral growth of GeS thin film in (c). (e) XRD spectra and standard reference PDF card of GeS. (f) Schematic and optical micrograph of fabricated GeS-field-effect transistors (FET). Output characteristics of GeS-FET under (g) dark environment and (h) white light at room temperature.


その他・特記事項（参考文献・謝辞等） / Remarks(References and Acknowledgements)

DOI (Publication and Proceedings)：
・10.1016/j.apsusc.2023.158992
・10.1088/1361-6528/ad15b8 
・10.1016/j.apsusc.2023.158656
・10.7546/crabs.2024.02.02
Oral Presentations etc.：
・JEVASUWAN, Wipakorn, FUKATA, Naoki. Monitoring on Hole Gas Accumulation, Interfacial and Crystalline Properties of Al-Catalyzed SiNW/Ge Core-Multishell Heterostructures. The 71st JSAP Spring Meeting, 2024, March 22, 2024-March 25, 2024
・ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki. Synthesis of Large-Area GeS Thin Films Using Vapor Transport Method. 2024年第71回応用物理学会春季学術講演会, March 22, 2024-March 25, 2024


成果発表・成果利用 / Publication and Patents

論文・プロシーディング（DOIのあるもの） / DOI (Publication and Proceedings)
  1. Kumaar Swamy Reddy Bapathi, Cumulative effect of spectral downshifting, anti-reflection and space-charge region formation in enhancing the spectral response of self-powered silicon photodetectors on sensitisation with CdZnS/ZnS core-shell quantum dots, Nano Energy, 122, 109277(2024).
    DOI: 10.1016/j.nanoen.2024.109277
  2. Bernice Mae Yu Jeco-Espaldon, Analysis of Inverted Metamorphic Multijunction Solar Cells After Epitaxial Lift-Off, 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC), , 0051-0058(2024).
    DOI: 10.1109/pvsc57443.2024.10749647
  3. Kumaar Swamy Reddy Bapathi, Enhancing silicon photodetector performance through spectral downshifting using core-shell CdZnS/ZnS and perovskite CsPbBr3 quantum dots, Nano Energy, 128, 109832(2024).
    DOI: 10.1016/j.nanoen.2024.109832
  4. Xiao Deng, Nanowire Electrode Structures Enhanced Direct Extracellular Electron Transport via Cell-Surface Multi-Heme Cytochromes in Desulfovibrio ferrophilus IS5, Electrochem, 5, 330-340(2024).
    DOI: 10.3390/electrochem5030021
  5. Petar Atanasov, Surface-Enhanced Raman Spectroscopy of Ammonium Nitrate Using Al Structures, Fabricated by Laser Processing of AlN Ceramic, Materials, 17, 2254(2024).
    DOI: 10.3390/ma17102254
  6. Yong-Lie Sun, Top-down fabrication of Si nanotube arrays using nanoimprint lithography and spacer patterning for electronic and optoelectronic applications, Materials Today Nano, 28, 100547(2024).
    DOI: 10.1016/j.mtnano.2024.100547
  7. Batu Ghosh, Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors, Small Science, 4, (2024).
    DOI: 10.1002/smsc.202400367
  8. Qinqiang Zhang, Synthesis of submillimeter-scale laterally-grown germanium monosulfide thin films and their electro-optic applications, Journal of Materials Chemistry C, 12, 18101-18110(2024).
    DOI: 10.1039/d4tc03074e
  9. Bernice Mae Yu Jeco-Espaldon, Optimal performance of silicon nanowire solar cells under low sunlight concentration and their integration as bottom cells in III–V multijunction systems, Frontiers in Nanotechnology, 6, (2024).
    DOI: 10.3389/fnano.2024.1456915
  10. Rahmat Hadi Saputro, High Doping Activation (≥1020 cm–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing, ACS Applied Electronic Materials, 6, 4297-4303(2024).
    DOI: 10.1021/acsaelm.4c00399
  11. Bernice Mae Yu Jeco-Espaldon, Analysis of Inverted Metamorphic Multijunction Solar Cells After Epitaxial Lift-Off, 2024 IEEE 52nd Photovoltaic Specialist Conference (PVSC), , 0051-0058(2024).
    DOI: 10.1109/pvsc57443.2024.10749647
  12. Rahmat Hadi Saputro, High Doping Activation (≥1020 cm–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing, ACS Applied Electronic Materials, 6, 4297-4303(2024).
    DOI: 10.1021/acsaelm.4c00399
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
  1. JEVASUWAN, Wipakorn, FUKATA, Naoki. Paper-thin Al-catalyzed Si nanowire photovoltaic cells and efficiency enhancement by energy transfer from Mn-doped perovskite nanocrystals. The 35th International Photovoltaic Science and Engineering Conference (PVSEC-35), November 10, 2024-November 15, 2024.
  2. JEVASUWAN, Wipakorn, FUKATA, Naoki. Efficient Al-Catalyzed SiNW Dimension Control for Device Downscaling of Si/Ge Core-Multishell Heterostructures. 秋季第85回応用物理学会学術講演会, September 16, 2024-September 20, 2024
  3. JEVASUWAN, Wipakorn, FUKATA, Naoki. Al-Catalyzed SiNW-based Si/Ge Core-Shell Heteroarchitectures and Hole Gas Accumulation Enhancement for Transistor Applications. 2024 International Conference on Solid State Devices and Materials (ssdm2024), September 01, 2024-September 04, 2024.
  4. ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki. Improvements in the Synthesis of Uniform Germanium Monosulfide Thin Films Using an Aluminum Catalyst. 37th International Microprocesses and Nanotechnology Conference (MNC 2024), November 12, 2024-November 15, 2024
  5. ZHANG, Qinqiang, MATSUMURA, Ryo, TSUKAGOSHI, Kazuhito, FUKATA, Naoki. Lateral Growth Control of GeS Thin Films and their Field-Effect Transistors. 第1回 半導体結晶技術に関する産学連携ワークショップ, October 31, 2024-November 01, 2024
  6. FUKATA, Naoki. Functionalized Semiconductor Nanostructures for Future Electronic- and Energy-related Devices. National Institute for Materials Science/University of Tsukuba/Nattional Chung Hsing Universuty Joint Workshop:Advanced Materials and Nanostructures for Future Science and Technologies, 2024-10-24
  7. ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki. Synthesis of Large-Area GeS Thin Films on Insulator Substrates. LANL/NIMS Quantum and functional Materials and MANA International Symposium 2024, October 15, 2024-October 17, 2024
  8. 深田 直樹. 半導体ナノ構造の機能化による電子・エネルギー素子応用. 秋季第85回応用物理学会学術講演会, September 16, 2024-September 20, 2024
  9. ZHANG, Qinqiang, MATSUMURA, Ryo, TSUKAGOSHI, Kazuhito, FUKATA, Naoki. Fabrication and Characterization of Germanium Monosulfide Field-Effect Transistors. 秋季第85回応用物理学会学術講演会, September 16, 2024-September 20, 2024.
  10. ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki. Growth of Uniform GeS Thin Films by Aluminum Catalyst. 秋季第85回応用物理学会学術講演会, September 16, 2024-September 20, 2024
  11. ZHANG, Qinqiang, MATSUMURA, Ryo, TSUKAGOSHI, Kazuhito, FUKATA, Naoki. Lateral crystallization of germanium monosulfide thin films and its application for field-effect transistors. SSDM2024, September 01, 2024-September 04, 2024
  12. 深田 直樹. 半導体ナノ構造への不純物ドーピングと評価. 第1回半導体基金委員会・研究会（名取研究会）, March 29, 2024-March 30, 2024
  13. MATSUMURA, Ryo, SAPUTRO, Rahmat Hadi, FUKATA, Naoki. High-Speed Continuous Wave Laser Annealing for Non-equilibrium Growth of Highly Strained Germanium-Based Materials. MNC2024, November 12, 2024-November 15, 2024
  14. 松村 亮, 張 秦強, マー ボウエン, マームード アーメド モハメド　フアード, 深田 直樹. 分子線堆積法による IV 族カルコゲナイド薄膜の絶縁膜上成長. 第85回応用物理学会秋季学術講演会, September 16, 2024-September 20, 2024
特許 / Patents

特許出願件数 / Number of Patent Applications：0件
特許登録件数 / Number of Registered Patents：0件

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