利用報告書 / User's Reports

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【公開日:2025.06.10】【最終更新日:2025.05.16】

課題データ / Project Data

課題番号 / Project Issue Number

24HK0122

利用課題名 / Title

Study on damage stability of homemade Titanium alloy under low-dose electron beam irradiation

利用した実施機関 / Support Institute

北海道大学 / Hokkaido Univ.

機関外・機関内の利用 / External or Internal Use

外部利用/External Use

技術領域 / Technology Area

【横断技術領域 / Cross-Technology Area】(主 / Main)計測・分析/Advanced Characterization(副 / Sub)-

【重要技術領域 / Important Technology Area】(主 / Main)その他/Others(副 / Sub)-

キーワード / Keywords

チタン基合金/ Titanium-based alloys, 耐環境・放射線合金/ Environment-resistant and radiation-resistant alloys, 超高圧電子顕微鏡/ Ultra-high voltage electron microscopy, イオンミリング(TEM試料作製)/ Ion milling (TEM sample preparation),電子顕微鏡/ Electronic microscope


利用者と利用形態 / User and Support Type

利用者名(課題申請者)/ User Name (Project Applicant)

Zhao Xiya

所属名 / Affiliation

Southern University of Science and Technology (SUSTech)

共同利用者氏名 / Names of Collaborators in Other Institutes Than Hub and Spoke Institutes

Shuai Wang,Naoyuki Hashimoto,Hiroshi Oka,Mengke Niu,Haotian Sun

ARIM実施機関支援担当者 / Names of Collaborators in The Hub and Spoke Institutes

Ohkubo Kenji,Tanioka Takashi,Naoyuki Hashimoto

利用形態 / Support Type

(主 / Main)機器利用/Equipment Utilization(副 / Sub),技術補助/Technical Assistance


利用した主な設備 / Equipment Used in This Project

HK-103:マルチビーム超高圧電子顕微鏡


報告書データ / Report

概要(目的・用途・実施内容)/ Abstract (Aim, Use Applications and Contents)

The damage of homemade Titanium alloy under low-dose electron irradiation at different temperatures were studied in-situ by high voltage transmission electron microscopy, which verified the damage stability and laid a foundation for the development of lightweight and radiation-resistant materials.

実験 / Experimental

The 3 mm disks for TEM observation were fabricated in Hokkaido University via twin-jet electro-polished using a TenuPol–5 (Struers) device in an electrolyte of 5 vol% perchloric acid, 95 vol% methanol at 20 V and -30°C. The microstructures were investigated via the transmission electron microscope (TEM, JEM-2010, JEOL) in Hokkaido University. The electron beam irradiation experiments were carried via high voltage transmission electron microscopy (HVEM, JEM-ARM1300, JEOL) in Hokkaido University. The samples were irradiated under room temperature (RT), 200°C, and 400°C at 1.25 keV and a dose of 0.025 dpa for 30 minutes.

結果と考察 / Results and Discussion

The lamellar structure was determined under bright field (BF) and dark field (DF) conditions (Fig. 1). Area 1, 2, and 3 was used for irradiation damage research at room temperature, 200°C and 400°C, respectively.The sample of area 1 was subjected to in-situ electron irradiation at room temperature, as shown in Fig. 2, and no damage defects were found for 30 minutes under a dose of 0.025 dpa. Local point defects started to emerge at tenth minute and gradually aggregated at 30th minute at 200°C (Fig. 3). At 400°C, a orientation rotation was observed in the lamellar structure, indicating a irradiation induced deformation in the grains. More point defects generated at 30th minute (Fig. 4). A homemade Titanium alloy was irradiated via 1.25keV electron beam at 0.025 dpa at room and elevate temperature for 30 minutes. Point defect emerged at elevate temperature. No obvious damage of dislocation loops appear. The homemade Titanium alloy exhibits radiation damage resistance under low-dose electron beam irradiation at low temperature.

図・表・数式 / Figures, Tables and Equations


Fig. 1. Lamellar structures of homemade Titanium alloy.



Fig. 2. HVEM images of in-situ electron irradiation of homemade Titanium alloy at RT.



Fig. 3. HVEM images of in-situ electron irradiation of homemade Titanium alloy at 200°C.



Fig. 4. HVEM images of in-situ electron irradiation of homemade Titanium alloy at 400°C.


その他・特記事項(参考文献・謝辞等) / Remarks(References and Acknowledgements)


成果発表・成果利用 / Publication and Patents

論文・プロシーディング(DOIのあるもの) / DOI (Publication and Proceedings)
口頭発表、ポスター発表および、その他の論文 / Oral Presentations etc.
特許 / Patents

特許出願件数 / Number of Patent Applications:0件
特許登録件数 / Number of Registered Patents:0件

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